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VT1045CBP
www.vishay.com
Vishay General Semiconductor
Revision: 22-May-12
2
Document Number: 89363
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ?
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF
= 2.5 A
= 5.0 A 0.49 0.58
TA
= 25 °C
VF
(1)
0.44 -
V
IF
IF
= 2.5 A
= 5.0 A 0.41 0.50
TA
= 125 °C
0.34 -
IF
Reverse current per diode VR
= 45 V
TA
= 25 °C
= 125 °C 5 15 mA
IR
(2)
- 500 μA
TA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT1045CBP UNIT
Typical thermal resistance
per diode
per device 2.5R?JC
3.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB VT1045CBP-M3/4W 1.87 4W 50/tube Tube
1010
12
00
2
4
6
8
100 120 140 160 180 200100
DC Forward Current atDC Forward Current at
Thermal EThermal Eqquilibriumuilibrium
DC Forward Rectifed Current (A)
Case Temperature (°C)
0
0.5
2.5
3.0
3.5
4.0
0123 564
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5D = 0.8
D = 1.0
D = tp/T tp
T
1.0
1.5
2.0
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